Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes |
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| Authors: | Lü Yuan-Jie Feng Zhi-Hong Lin Zhao-Jun Gu Guo-Dong Dun Shao-Bo Yin Jia-Yun Han Ting-Ting Cai Shu-Jun |
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| Affiliation: | a Science and Technology on Application-Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;b School of Physics, Shandong University, Jinan 250100, China |
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| Abstract: | Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current–voltage and capacitance–voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger’s and Poisson’s equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode. |
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| Keywords: | Al(Ga)N/GaN Schottky barrier height current-transport mechanism leakage current |
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