| Ultraviolet Phototransistors on AlGaN/GaN Heterostructures |
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| 引用本文： | 陈辰 姜文海 任春江 李忠辉 焦刚 董逊 陈堂胜. Ultraviolet Phototransistors on AlGaN/GaN Heterostructures[J]. 中国物理快报, 2007, 24(9): 2707-2709 |
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| 作者姓名： | 陈辰 姜文海 任春江 李忠辉 焦刚 董逊 陈堂胜 |
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| 作者单位： | [1]Department of Physics, Nanjing University, Nanjing 210093 [2]National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016 |
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| 基金项目： | Supported by the National Basic Research Programme and the Advance Research Foundation of China under Grant Nos 513270403 and 51308040308. |
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| 摘 要： | We report on the fabrication and characterization of phototransistors based on AIGaN/GaN heterostructure grown over 6H-SiC substrates. The device has two functions： as a high electron mobility transistor （HEMT） and an ultraviolet photodetector at the same time. As an HEMT, its maximum transconductance is 170mS/ram, while the minimum cutoff frequency fT and the maximum oscillation frequency fm are 19 and 35 GHz, respectively. As a photodetector, the device is visible blind, with an ultraviolet/green contrast of three orders of magnitude, and a responsivity as high as 1700 A/W at the wavelength of 362nm.
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| 关 键 词： | 紫外线 光电晶体管 AlGaN GaN 异质结构 |
| 收稿时间： | 2007-02-13 |
| 修稿时间： | 2007-02-13 |
Ultraviolet Phototransistors on AlGaN/GaN Heterostructures |
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| CHEN Chen,JIANG Wen-Hai,REN Chun-Jiang,LI Zhong-Hui,JIAO Gang,DONG Xun,CHEN Tang-Sheng. Ultraviolet Phototransistors on AlGaN/GaN Heterostructures[J]. Chinese Physics Letters, 2007, 24(9): 2707-2709 |
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| Authors: | CHEN Chen JIANG Wen-Hai REN Chun-Jiang LI Zhong-Hui JIAO Gang DONG Xun CHEN Tang-Sheng |
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| Affiliation: | 1 Department of Physics, Nanjing University, Nanjing 210093 ;2 National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016 |
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| Abstract: | We report on the fabrication and characterization of phototransistors based on AlGaN/GaN heterostructure grown over 6H-SiC substrates. The device has two functions: as a high electron mobility transistor (HEMT) and an ultraviolet photodetector at the same time. As an HEMT, its maximum transconductance is 170mS/mm, while the minimum cutoff frequency fT and the maximum oscillation frequency fm are 19 and 35GHz, respectively. As a photodetector, the device is visible blind, with an ultraviolet/green contrast of three orders of magnitude, and a responsivity as high as 1700A/W at the wavelength of 362nm. |
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| Keywords: | 85.60.Dw 73.61.Ey 78.66.Fd |
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