| Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin A1GaN Window Layer |
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| 作者姓名： | 周梅 赵德刚 |
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| 作者单位： | [1]Department of Physics, China Agriculture University, Beijing 100083 [2]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| 基金项目： | Supported by the Scientific Research Foundation for the Young Scholars of China Agriculture University under Grant No 2006007. |
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| 摘 要： | We propose a new structure of GaN based Schottky barrier ultraviolet photodetector, in which a thin n-type A1GaN window layer is added on the conventional n^--GaN/n^＋-GaN device structure. The performance of the Schottky barrier ultraviolet photodetector is found to be improved by the new structure. The simulation result shows that the new structure can reduce the negative effect of surface states on the performance of Schottky barrier GaN photodetectors, improving the quantum efficiency and decreasing the dark current. The investigations suggest that the new photodetector can exhibit a better responsivity by choosing a suitably high carrier concentration and thin thickness for the A1GaN window layer.
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| 关 键 词： | 光电探测器 紫外线 光辐射 薄膜 |
| 收稿时间： | 2007-3-10 |
| 修稿时间： | 2007-03-10 |
Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin AlGaN Window Layer |
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| ZHOU Mei,ZHAO De-Gang.Performance Improvement of GaN Based Schottky Barrier Ultraviolet Photodetector by Adding a Thin A1GaN Window Layer[J].Chinese Physics Letters,2007,24(6):1745-1748. |
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| Authors: | ZHOU Mei ZHAO De-Gang |
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| Affiliation: | 1 Department of Physics, China Agriculture University, Beijing 100083 2 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Abstract: | We propose a new structure of GaN based Schottky barrier ultraviolet photodetector, in which a thin n-type AlGaN window layer is added on the conventional n--GaN/n+-GaN device structure. The performance of the Schottky barrier ultraviolet photodetector is found to be improved by the new structure. The simulation result shows that the new structure can reduce the negative effect of surface states on the performance of Schottky barrier GaN photodetectors, improving the quantum efficiency and decreasing the dark current. The investigations suggest that the new photodetector can exhibit a better responsivity by choosing a suitably high carrier concentration and thin thickness for the AlGaN window layer. |
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| Keywords: | 81 05 Ea 85 60 Dw 85 60 Bt |
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