雾化辅助化学气相沉积法氧化镓薄膜生长研究

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (7): 1163-1168.

雾化辅助化学气相沉积法氧化镓薄膜生长研究

罗月婷¹, 肖黎^1,2, 陈远豪¹, 梁昌兴¹, 龚恒翔^1,2

1.重庆理工大学理学院,重庆 400054;
2.重庆理工大学,绿色能源材料技术与系统重庆市重点实验室,重庆 400054

收稿日期:2022-04-10 出版日期:2022-07-15 发布日期:2022-08-11
通讯作者: 肖黎,博士,讲师。E-mail:xiaoli@cqut.edu.cn
作者简介:罗月婷(1995—),女,四川省人,硕士研究生。E-mail:1823037439@qq.com
基金资助:
重庆市自然科学基金博士后科学基金(cstc2021jcyj-bshX0219);重庆理工大学本科教育教学改革研究项目(2021YB46)

Gallium Oxide Thin Film Prepared by Atomization-Assisted Chemical Vapor Deposition

LUO Yueting¹, XIAO Li^1,2, CHEN Yuanhao¹, LIANG Changxing¹, GONG Hengxiang^1,2

1. College of Science, Chongqing University of Technology, Chongqing 400054, China;
2. Chongqing Key Laboratory of Green Energy Materials Technology and System, Chongqing University of Technology, Chongqing 400054, China

Received:2022-04-10 Online:2022-07-15 Published:2022-08-11

摘要/Abstract

摘要： 采用自主设计搭建的雾化辅助化学气相沉积系统设备,开展了Ga₂O₃薄膜制备及其特性研究工作。通过X射线衍射研究了沉积温度、系统沉积压差对Ga₂O₃薄膜结晶质量的影响。结果表明,Ga₂O₃在425~650 ℃温度区间存在物相转换关系。随着沉积温度从425 ℃升高至650 ℃,薄膜结晶分别由非晶态、纯α-Ga₂O₃结晶状态向α-Ga₂O₃、β-Ga₂O₃两相混合结晶状态改变。通过原子力显微镜表征探究了生长温度对Ga₂O₃薄膜表面形貌的影响,从475 ℃升高至650 ℃时,薄膜表面粗糙度由26.8 nm下降至24.8 nm。同时,高分辨X射线衍射仪测试表明475 ℃、5 Pa压差条件下的α-Ga₂O₃薄膜样品半峰全宽仅为190.8″,为高度结晶态的单晶α-Ga₂O₃薄膜材料。

关键词: Ga₂O₃, 薄膜, 雾化辅助化学气相沉积, 沉积温度, 压差, 单晶, 半导体

Abstract: Based on the self-assembled equipment, the properties of Ga₂O₃ films prepared by atomization-assisted chemical vapor deposition (AA-CVD) method were studied. The effects of temperature and pressure difference on the crystal qualities of Ga₂O₃ thin films were studied by X-ray diffraction. The results show that there is a phase structure conversion process of Ga₂O₃, upon the temperature improving from 425 ℃ to 650 ℃, the crystalline structure of the thin films transform from amorphous structure, pure α-Ga₂O₃ crystal structure to α-Ga₂O₃, β-Ga₂O₃ two-phase mixed crystal structure. The effects of temperature on the thin films’ surface morphology were characterized by atomic force microscope. When the temperature increases from 475 ℃ to 650 ℃, the root-mean-square roughness of the thin films surface decrease from 26.8 nm to 24.8 nm. At the same time, the single crystal property of the α-Ga₂O₃ thin film was measured by high resolution X-ray diffraction. The result shows that the thin film sample having a full width at half maximum of only 190.8″ which prepared at the temperature of 475 ℃ and at the pressure difference of 5 Pa, it can prove that the α-Ga₂O₃ film is a highly crystallized single-crystal materia.

Key words: Ga₂O₃, thin film, atomization-assisted chemical vapor deposition, deposition temperature, differential pressure, single crystal, semiconductor

中图分类号:

罗月婷, 肖黎, 陈远豪, 梁昌兴, 龚恒翔. 雾化辅助化学气相沉积法氧化镓薄膜生长研究[J]. 人工晶体学报, 2022, 51(7): 1163-1168.

LUO Yueting, XIAO Li, CHEN Yuanhao, LIANG Changxing, GONG Hengxiang. Gallium Oxide Thin Film Prepared by Atomization-Assisted Chemical Vapor Deposition[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(7): 1163-1168.

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