摘要： 在一定压力的Ar气氛中对Si (111) 衬底上的PS/OCS(硅的有机化合物)凝胶叠层进行热处理,制备出单晶4H-SiC薄膜.用XPS、XRD、TEM、TED和SEM研究了热处理温度和压力对薄膜结晶质量和晶型的影响.XPS分析显示薄膜中C/Si比为1.09.SEM分析表明薄膜的表面平整,SiC/Si(111)界面清晰、无层错缺陷形成.进一步讨论了层错缺陷形成及抑制的机理.
中图分类号:
王玉霞;李赟;陈征;何海平;王建文;邹优鸣. 低压Ar气氛下用PS/OCS/Si (111)叠层热解制备单晶4H-SiC薄膜及层错缺陷抑制机理[J]. 人工晶体学报, 2006, 35(2): 337-341.
WANG Yu-xia;LI Yun;CHEN Zheng;HE Hai-ping;WANG Jian-wen;ZOU You-ming. Growth of Single Crystalline 4H-SiC Film by Pyrogenation of PS/OCS/Si (111) Nappe in Low-pressure Ambient Ar and Mechanism of Suppressing Interfacial Dislocations[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2006, 35(2): 337-341.
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