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8-羟基喹啉镧两亲性配合物LB膜的双层电致发光器件
引用本文:欧阳健明,林伟汉,黄春辉,张立东,李永航,杨春和.8-羟基喹啉镧两亲性配合物LB膜的双层电致发光器件[J].高等学校化学学报,2001,22(11):1781-1784.
作者姓名:欧阳健明  林伟汉  黄春辉  张立东  李永航  杨春和
作者单位:1. 暨南大学化学系,广州,510632
2. 北京大学稀土材料化学及应用国家重点实验室,北京,100871
3. 广州邮电通信设备有限公司,广州510630
4. 中国科学院北京化学研究所有机固体开放实验室,北京,,100080
基金项目:广东省自然科学基金 (批准号 :970 6 35 ),北京大学稀土材料化学及应用国家重点实验室开放基金资助课题
摘    要:以具有不同层数的两亲配合物二2-(N-十六烷基氨基甲酰基)-8-羟基喹啉]合镧La(HQ)2Cl]的LB膜为发光层,PBD为电子传输层,制备了双层结构的电致发光(EL)器件:ITO/LB膜/PBD/Al。器件产生黄绿色注入式发光。LB膜的层数和沉积压对器件的性能具有重要影响。在16V激发电压下,5,11和21层LB膜双层EL器件的电流密度分别为48,29和16.4mA/cm^2,启亮电压阀值为7.5,8.5和9.5V。器件的亮度随电流密度和驱动电压的增加而增加。在相同偏压下,21层LB膜EL器件的亮度大于5和11层LB膜的器件。在25mN/m沉积的LB膜制备的EL器件具有较高的亮度(1219cd/m^2)和击穿电压。初步讨论了造成这种影响的原因。

关 键 词:电致发光器件  LB膜  双层器件  8-羟基喹啉镧  两亲性配合物  沉积压  亮度  发光材料
文章编号:0251-0790(2001)11-1781-04

Bilayer Electrol uminescent Devices of Langmuir-Blodgett Fil ms of Amphiphilic Complex Derivated from 8-Hydroxyquinoline Lanthanum
OUYANG Jian Ming ,LIN Wei Han ,HUANG Chun Hui ZHANG Li Dong ,LI Yong Hang ,YANG Chun He.Bilayer Electrol uminescent Devices of Langmuir-Blodgett Fil ms of Amphiphilic Complex Derivated from 8-Hydroxyquinoline Lanthanum[J].Chemical Research In Chinese Universities,2001,22(11):1781-1784.
Authors:OUYANG Jian Ming  LIN Wei Han  HUANG Chun Hui ZHANG Li Dong  LI Yong Hang  YANG Chun He
Affiliation:OUYANG Jian Ming 1*,LIN Wei Han 1,HUANG Chun Hui 2 ZHANG Li Dong 3,LI Yong Hang 4,YANG Chun He 4
Abstract:Organic electroluminescent (EL) devices with a bilayer structure (ITO/LB film/PBD/Al) were fabricated with an Langmuir Blodgett (LB) film of amphiphilic complex bis N hexadecyl 8 hydroxy 2 quinoline carboxamide] lanthanumLa(HQ) 2Cl] as the emitting material. Excellent performance of the EL devices originates from the insertion of an electron transport layer between the electrode and the emitting layer. Greenish yellow EL emission with a luminance of about 1 219 cd/m 2 was observed with a low voltage drive(7.5 V). The number of the layers of LB films and the deposited surface pressure have a strong influence on the I V characteristics, EL intensity, as well as break down voltage of the EL devices. When the LB films were prepared at the surface pressure of 25 mN/m, the current density crossing this kind of diodes had stronger nonlinear I V characteristics and the organic EL device had a higher EL intensity than another device prepared at lower surface pressure(5 and 15 mN/m). At a lower surface pressure, there may be some point defects or pinholes in the LB film, in which the high tunnel current would increase exponentially with the field, leading to an increase in the current density crossing the EL device and a decrease in the recombination probability of electrons and holes at a higher voltage.
Keywords:Electroluminescent device  Langmuir  Blodgett film  Bilayer devices
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