单壁碳纳米管的轴向能带工程

单壁碳纳米管具有优异的电子学特性,是制备新一代高性能集成电路的重要材料.碳纳米管芯片之路存在诸多挑战,包括直径和手性的控制生长方法、金属性和半导体性单壁碳纳米管的分离方法、器件加工与集成方法等.这些课题从本质上讲大多属于化学问题,因此碳纳米管芯片研究为化学家们提供了新的机遇与挑战.过去10年来,我们围绕单壁碳纳米管的轴向能带工程这一研究思路,开展了一系列碳纳米管芯片的基础探索工作,发展了若干有效的单壁碳纳米管局域能带的调控方法,包括温度阶跃生长法、脉冲供料生长法、基底调控法以及形变调控法等.本文系统地阐述了这些局域能带调控方法,为使读者对该领域的研究进展有一个较为全面的了解,文中对其他课题组开展的代表性工作也给予了综述性介绍.

Axial band structure engineering of single-walled carbon nanotubes

Single-walled carbon nanotubes （SWNTs） possess superior electronic properties that make them ideal candidates for making next-generation electronic circuits. Many challenges exist for the real applications of SWNTs-based electronic chips, including diameter and chirality controlled growth, separation of metallic and semiconducting SWNTs as well as device fabrication and integration. Researches on SWNTs chips offer new opportunities and challenges for chemists, since most of the challenges are intrinsically the issues of chemistry. We have been working on SWNTs electronic devices in the last decade following a general concept of axial band structure engineering. A number of techniques have been developed to tune the local band structures of SWNTs, including temperature-oscillation CVD growth, pulsed CVD growth, substrate-induced band structure modification, and deformation-induced band structure modification, which will be reviewed in this article together with the relevant works done by other groups.