Instability of an elastically compressed silicon surface under etching

An unusual relief in the form of linear defects resembling quasicracks or grooves was observed on a compressionally stressed surface of a bent silicon surface subjected to chemical etching. The average distance between the forming defects was determined by the magnitude of the surface mechanical strain. The reason for this is assumed to be an Asaro-Tiller-Srolovitz instability in the compressed-surface-etching-agent system. A simple technique is proposed for producing considerable mechanical strains, up to 0.5%, in a silicon surface at room temperature. Fiz. Tverd. Tela (St. Petersburg) 41, 1416–1418 (August 1999)