| CMP过程中抛光盘作用外力的影响因素分析 |
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| 引用本文： | 许佩霞,袁晓林,蒋建忠.CMP过程中抛光盘作用外力的影响因素分析[J].现代制造工程,2011(5). |
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| 作者姓名： | 许佩霞 袁晓林 蒋建忠 |
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| 作者单位： | 江南大学机械工程学院,无锡,214122 |
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| 摘 要： | 根据芯片/磨粒/抛光盘三体接触当量梁的弯曲假设,建立了更加准确合理的抛光盘作用在磨粒上的外力的理论模型,并通过实例对前人的模型和新模型进行对比.最后借用已有分子动力学模拟结果对理论模型进行验证.结果表明作用在单个磨粒上的外力与磨粒的直径、磨粒的浓度、抛光盘的弹性模量有关,理论计算值与分子动力学模拟结果基本一致.
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| 关 键 词： | 机械化学抛光 磨粒 建模 芯片 |
Factors influencing the applied force on a single micro-particle from pad in CMP |
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| XU Pei-xia,YUAN Xiao-lin,JIANG Jian-zhong.Factors influencing the applied force on a single micro-particle from pad in CMP[J].Modern Manufacturing Engineering,2011(5). |
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| Authors: | XU Pei-xia YUAN Xiao-lin JIANG Jian-zhong |
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| Affiliation: | XU Pei-xia,YUAN Xiao-lin,JIANG Jian-zhong (School of Mechanical Engineering,Southern Yangtze University,Wuxi 214122,Jiangsu,China) |
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| Abstract: | In accordance with hypothesis of the equivalent beam bending for a three body contact among wafer/particles/pad,a more precise and reasonable mathematical model about the applied force on particles from pad is developed.The model comprehensively considers the influence of most valuables in chemical mechanical polishing process including pad elastic modulus,particle diameter and slurry concentration.Then,through theoretical calculation of an example,the new model and former models are compared and analyzed.F... |
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| Keywords: | Chemical Mechanical Polishing(CMP) abrasive particle modeling wafer |
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