Study on the effect of various machining speeds on the wafer polishing process

Silicon wafer polishing has an important role in semiconductor manufacturing; the general purpose of the polishing process is to produce a mirror-like surface. The wafer surface roughness is affected by many variables such as the carrier head unit characteristics, operation, platen and chuck speeds, pad and slurry ratios, and temperature. The optimum process conditions for the experimental temperature, down-force, slurry ratio, and processing time were determined in previous studies and used as fixed factors in this experiment. The main purpose of the present study was to determine how the different platen and chuck machining speeds influence the wafer surface roughness via the polishing process to obtain the optimum machining speed. In the results, the machining temperature appeared to differ at different machining speeds, which is a vital element with regard to wafer polishing.