Design optimization of semiconductor piezoresistors with Schottky diode contacts

A modeling theory is developed to predict the performance of piezoresistors which incorporate Schottky diode electrical contacts. This new theory allows the design of high performance gauges which can be fabricated using Non-Lithographically-Based Microfabrication (NLBM) techniques. These semiconductor piezoresistors can be designed in customizable sizes and fabricated in parallel in order to integrate position sensing into MEMS flexural positioners. Customizable sensing for nanopositioning platforms will enable advances in a range of nano-scale fabrication and metrology applications. A semiconductor piezoresistor with Schottky diode contacts was fabricated and attached to a titanium flexure. This device is shown to match predicted electrical performance within about 8% and to show a gauge factor of 116, within 2% of the predicted value. Optimized performance limits for Schottky diode semiconductor piezoresistors are identified to be about 127 dB full noise dynamic range for a quarter bridge over a 10 kHz sensor bandwidth on a 600 μm width titanium flexure, making them ideal for sensing on meso-/micro-scale flexural positioners. Methods are suggested for achieving the performance limits indicated above and the impact of these methods on the sensor dynamic range are studied.