温度对TFT SRAM单粒子翻转及其空间错误率预估的影响

本文研究了215～353 K温度范围内商用4M 0.15 μm薄膜晶体管结构SRAM单粒子翻转(SEU)截面随温度的变化。实验结果显示，在截面曲线饱和区，SEU截面基本不随温度变化；在截面曲线上升区，SEU截面随温度的升高而增加。使用Space Radiation 7.0软件研究了温度对其空间错误率预估的影响，模拟结果显示，SEU截面随温度的变化改变了SRAM SEU截面-LET值曲线形状，导致其LET阈值漂移，从而影响空间错误率预估结果

Effect of Temperature on Single Event Upset of TFT SRAM and Its Space Error Rate Prediction

The temperature (215-353 K) effect on single event upset (SEU) of a 4M commercial SRAM based on thin film transistors manufactured with a 0.15 μm CMOS process was studied. The experimental results show that temperature influences can be ignored on the saturation portion of the cross-sectional curve, and the SEU cross-section increases with temperature on the rising portion of the cross-sectional curve. The influence of temperature on its space error rate prediction was studied utilizing Space Radiation 7.0 software. The simulation results show that SRAM SEU cross-section change with temperature leads to change of the shape of SEU-LET curve, and results in the threshold LET value drift, which affects the space error rate prediction result.