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| 基于DMOS管的电荷灵敏前置放大器设计 | |
| 引用本文： | 高艳妮,苏弘.基于DMOS管的电荷灵敏前置放大器设计[J].核电子学与探测技术,2010,30(1). |
| 作者姓名： | 高艳妮 苏弘 |
| 作者单位： | 1. 中国科学院近代物理研究所,甘肃兰州,730000;中国科学院研究生院,北京,100049 2. 中国科学院近代物理研究所,甘肃兰州,730000 3. 中国科学院近代物理研究所,甘肃兰州,730000;杜阿拉大学物理学院,喀麦隆杜阿拉 |
| 摘 要： | 提出了一种由DMOS场效应管构成的电荷灵敏前置放大器,可用于硅,Si(Li),CdZnTe及CsI探测器。该前置放大器采用不同于传统的阻容反馈式的电路结构,完全使用MOS管搭建,该前放的设计完成为设计实现ASIC电路准备了技术基础。由Multisi m仿真结果看出该电荷灵敏前置放大器输出信号上升时间小于15ns,并且具有很好的稳定性。 |
| 关 键 词： | 电荷灵敏前置放大器 设计 仿真 |
Design of A Charge Sensitive Preamplifier Based on DMOS FET |
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| GAO Yan-ni,SU Hong,WEMBE TAFO Evariste.Design of A Charge Sensitive Preamplifier Based on DMOS FET[J].Nuclear Electronics & Detection Technology,2010,30(1). | |
| Authors: | GAO Yan-ni SU Hong WEMBE TAFO Evariste |
| Abstract: | A charge sensitive preamplifier composed of DMOS for silicon,TSi(Li),CdZnTe and CsI detectors etc was proposed in the paper.It used a circuit structure different from traditional one with resistance and capacitance feedback.It was composed of DMOS only so that it can be developed further easily to make Application Specific Integrated Circuit.We also find it has a rise time less than 15ns and good stability from the result of simulation with Multisim. |
| Keywords: | DMOS DMOS transistor Charge sensitive preamplifier Design Simulation |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |
