首页 | 官方网站   微博 | 高级检索  
     

基于宽禁带元件的电池储能用双向直流变换器
引用本文:何国锋,李小敏,董燕飞,司文杰.基于宽禁带元件的电池储能用双向直流变换器[J].可再生能源,2022(3).
作者姓名:何国锋  李小敏  董燕飞  司文杰
作者单位:河南城建学院电气与控制工程学院
基金项目:国家自然科学基金项目(51777124,61801345);河南省自然科学基金项目(222300420400)。
摘    要:为了保证微电网电能质量,微电网须配备储能系统协助可再生能源实现削峰填谷。文章针对低压电池储能系统,设计了一种全氮化镓(GaN)高频双有源桥型双向直流变换器,详细分析了电感、变压器运行参数,并建立和分析了变换器运行损耗模型。设计了高频条件下氮化镓驱动电路,并对线路与半桥电路的布局进行优化。对双有源桥变换器样机进行双脉冲测试试验,试验结果验证了样机驱动电路设计的合理性与氮化镓开关管的特性,并通过对比实验验证了样机在同一工况、不同调制策略时三重移相调制策略的优势。

关 键 词:微电网  储能系统  氮化镓  双有源桥

Bidirectional DC-DC converter for battery energy storage based on wide band gap device
He Guofeng,Li Xiaomin,Dong Yanfei,Si Wenjie.Bidirectional DC-DC converter for battery energy storage based on wide band gap device[J].Renewable Energy,2022(3).
Authors:He Guofeng  Li Xiaomin  Dong Yanfei  Si Wenjie
Affiliation:(College of Electrical and Control Engineering,Henan University of Urban Construction,Pingdingshan 467036,China)
Abstract:In order to ensure the power quality of microgrid,it must be equipped with energy storage system to help renewable energy to realize the function of peak shaving and valley filling.For the low-voltage battery energy storage system,this paper designs high-frequency bidirectional DC converter based on an all gallium nitride(GAN),which belongs to double active bridge topology,Firstly,the operating parameters of inductance and transformer are analyzed in detail,and the operating loss model of the converter is established.Secondly,the gallium nitride driving circuit at high frequency is designed,and the layout of circuit and half bridge circuit is optimized.Finally,the double pulse test is carried out on the prototype of double active bridge converter.The test results verify the rationality of the driving circuit design of the prototype and the characteristics of gallium nitride switch.Through comparative experiments,the advantages of triple phase-shifting modulation strategy of the prototype under the same working condition and different modulation strategies are verified.
Keywords:micro grid  energy storage system  GaN  dual active bridge
本文献已被 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号