| 氢化非晶硅光吸收系数的计量模式对少子扩散长度测量的影响 |
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| 引用本文： | 张治国,宿昌厚.氢化非晶硅光吸收系数的计量模式对少子扩散长度测量的影响[J].太阳能学报,1992,13(4):363-366. |
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| 作者姓名： | 张治国 宿昌厚 |
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| 作者单位： | 内蒙古师范大学物理系，北京工业大学电子工程系 呼和浩特 010022，北京 100022 |
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| 摘 要： |
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| 关 键 词： | 氢化非晶硅 吸收系数 扩散长度 |
MEASURING MODEL OF ABSORPTION COEFFICIENT OF a-Si:H AND ITS EFFECT ON DIFFUSION LENGTH MEASUREMENT OF MINORITY CARRIERS |
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| Zhang Zhi-guo.MEASURING MODEL OF ABSORPTION COEFFICIENT OF a-Si:H AND ITS EFFECT ON DIFFUSION LENGTH MEASUREMENT OF MINORITY CARRIERS[J].Acta Energiae Solaris Sinica,1992,13(4):363-366. |
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| Authors: | Zhang Zhi-guo |
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| Abstract: | In this paper, the effect of the measuring model of absoption coefficient of a-Si:H on the diffusion length measurement of minority carriers with SPV method was reported. It is shown that an oxidized film appears on the surface of a-Si:H. A new measuring model which is much adaptable to the practical situation, was derived and the experimental data showed that measurement results of a-Si:H/SnO2/Glass based on the new model got good agreement with theoretical analysis. |
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| Keywords: | absorption coefficient of a-Si:H measuring model diffusion length measurement |
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