Minority carrier lifetime in plasma-textured silicon wafers for solar cells |
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| Authors: | G Kumaravelu MM Alkaisi D Macdonald J Zhao B Rong A Bittar |
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| Affiliation: | aDepartment of Electrical and Computer Engineering, University of Canterbury, Private Bag 4800, Christchurch, New Zealand;bDepartment of Engineering, FEIT, ANU, Acton ACT 0200, Australia;cCentre for Photovoltaic Engineering, UNSW, Sydney, NSW 2052, Australia;dDIMES, Technical University of Delft, P.O. Box 5053, 2600GB, Delft, Netherlands;eIRL, P.O. Box 31-310, Lower Hutt 6009, Wellington, New Zealand |
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| Abstract: | In this work a comparison between plasma-induced defects by two different SF6 texturing techniques, reactive ion etching (RIE) and high-density plasma (HDP) is presented. It is found that without any defect-removal etching (DRE), the minority carrier lifetime is the highest for the HDP technique. After DRE, the minority carrier lifetime rises as high as 750 μs for both RIE- and HDP-textured wafers at an excess carrier density of 1×1015 cm−3. The measured lifetimes correspond to an implied one-sun open-circuit voltage of around 680 mV compared to about 640 mV before DRE for the HDP-textured wafers. FZ silicon 1 0 0 wafers were used in this study. We also noted that in the RIE process, the induced defect density was significantly lower for wafers etched at 300 K than those etched at 173 K. |
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| Keywords: | Reactive ion etching Surface texturing Silicon solar cell Minority carrier lifetime |
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