| HFCVD法合成金刚石的初期生长过程 |
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| 引用本文： | 邱万奇,刘正义.HFCVD法合成金刚石的初期生长过程[J].兵器材料科学与工程,2001,24(5):50-52. |
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| 作者姓名： | 邱万奇 刘正义 |
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| 作者单位： | 华南理工大学机电工程系,广州,510640 |
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| 基金项目： | 广东省自然科学基金;990548; |
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| 摘 要： | 用XL30FEG扫描电镜对热丝化学气相沉积 (HFCVD)法合成的金刚石颗粒的初期生长过程进行了研究。结果表明 ,金刚石在 p -Si(10 0 )基片上的初始形核密度很高 ,可达 10 10 /cm2 ;在随后的颗粒长大过程中 ,颗粒快速长大 ,颗粒密度急剧减少 ;颗粒的长大速率随其尺寸的增大而减小 ,最后趋于一稳定值
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| 关 键 词： | HFCVD 金刚石 形核 生长速率 |
| 文章编号： | 1004-244X(2001)05-0050-03 |
| 修稿时间： | 2000年12月18日 |
Initial growth process of diamond crystal synthesized by HFCVD method |
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| QIU Wanqi,LIU Zhengyi Correspondent:QIU Wanqi,Dept.Mechano-electronic Engineering,South China University of Technology,Guangzhou ,China.Initial growth process of diamond crystal synthesized by HFCVD method[J].Ordnance Material Science and Engineering,2001,24(5):50-52. |
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| Authors: | QIU Wanqi LIU Zhengyi Correspondent:QIU Wanqi DeptMechano-electronic Engineering South China University of Technology Guangzhou China |
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| Affiliation: | QIU Wanqi,LIU Zhengyi Correspondent:QIU Wanqi,Dept.Mechano-electronic Engineering,South China University of Technology,Guangzhou 510640,China |
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| Abstract: | The initial growth process of diamond grain synthesized by HFCVD method was investigated by using XL30FEG SEM. The results show that the initial diamond grain density on p-Si(100) substrate is more than 10 10 /cm 2. As deposition progress, the grains grow up rapidly and the density decreases quickly. The growth rate of diamond grain decreases as grain growing up and tend to a certain rate at last. |
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| Keywords: | HFCVD diamond nucleation growth rate |
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