Microstructure evolution in Cu pillar/eutectic SnPb solder system during isothermal annealing |
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| Authors: | Byoung-Joon Kim Gi-Tae Lim Jaedong Kim Kiwook Lee Young-Bae Park Ho-Young Lee Young-Chang Joo |
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| Affiliation: | (1) United Microelectronics Corporation, No. 3, Li-Hsin Rd. II, Hsinchu Science Park, 300 Hsinchu, Taiwan, ROC;(2) Department of Mechanical Engineering, National United University, No. 1, Lienda, Miaoli, Taiwan, ROC |
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| Abstract: | The reaction between Cu pillar and eutectic SnPb solder during isothermal annealing was studied systematically. Intermetallic
compounds (IMCs), such as Cu6Sn5 and Cu3Sn, were formed in between Cu and SnThe parabolic rate law was observed on IMC formation, which indicated that the growth
of IMCs was controlled by atomic diffusion (a diffusion-limited process). Annealing at 165 °C for 160 h decreased the growth
rate of Cu6Sn5, and at the same time increased the growth rate of Cu3Sn. This was when Sn in solder was exhausted completely. The activation energies for the growth of Cu3Sn and Cu6Sn5 were measured to be 1.77 eV and 0.72 eV, respectively. The Kirkendall void that formed at the interface between Cu pillar
and solder obeyed the parabolic rate law. The growth rate of the Kirkendall void increased when the Sn in solder was consumed
in its entirety. |
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