热丝化学气相沉积法制备优质微米亚微米级单晶金刚石的研究

利用热丝化学气相沉积法（HFCVD）,在硅片衬底上进行微米级（〉1μm）及亚微米级（〈1μm）单晶金刚石的沉积研究。微米级金刚石是以高温高压法（HPHT）制备的1μm金刚石颗粒为籽晶,通过甩胶布晶的方法,在衬底上均匀分布晶种,并通过合理控制沉积工艺参数,在衬底上形成晶形完好的单晶金刚石。在沉积2 h后,可消除原HPHT籽晶缺陷,沉积6 h后,生长出晶形良好的立方八面体金刚石颗粒（约4μm）;对于亚微米级单晶金刚石,是直接在衬底上进行合成,通过调控沉积参数（如衬底预处理方法,偏流大小,沉积时间）对单晶金刚石的分布密度和颗粒度进行控制,经过2 h的沉积,最终获得了0.7μm的二十面体单晶金刚石。

Preparation and characterization of high quality micro/submicro single crystal diamonds by hot filament CVD method

High quality micro/submicro diamonds with euhedral diamond faces were prepared using hot filament chemical vapor deposition technique（HFCVD）.The micro single crystal diamonds（1 μm）were deposited on the diamond seeds in the size of 1μm synthesized under high pressure and high temperature（HPHT）.The photoresist solution with diamond seeds were dispersed uniformly on silicon wafers using a spin coater machine.After 2 hours deposition,the defects of the HPHT diamond seeds were eliminated.After 6 hours depositionn,the diamonds of 4 μm with well-defined morphology were obtained.Meanwhile,the submicron single crystal diamonds（1 μm） were directly deposited on silicon wafers.The crystal density and size were controlled by adjusting the deposition parameters,such as the pre-treatment method for substrate,bias current and deposition time.After 2 hours deposition,icosahedron crystals with size of 0.7 μm were successfully prepared.