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等温CVD制备炭/炭复合材料过程中气体滞留时间的数模分析
引用本文:于澍,郑洲顺,张福勤,蔡永强.等温CVD制备炭/炭复合材料过程中气体滞留时间的数模分析[J].中国有色金属学会会刊,2011,21(8):1833-1839.
作者姓名:于澍  郑洲顺  张福勤  蔡永强
作者单位:中南大学粉末冶金国家重点实验室;中南大学数学科学与计算技术学院;
基金项目:Projects (50702078,50874123) supported by the National Natural Science Foundation of China; Project (2009AA03Z536) supported by the National High-tech Research and Development Program of China; Project (2011CB606306) supported by the National Research Program of China; Project supported by the Program for New Century Excellent Talents in University of China
摘    要:在化学气相沉积(CVD)制备炭/炭复合材料的过程中,对采用强制通过毛坯的特定装炉方式下的碳源气体的流动动力学及其反应机理进行系统的理论分析。在一系列的计算基础上,得到毛坯内部空腔压强、毛坯外部空腔压强和毛坯的孔隙度随时间变化的微分方程模型,求出气体在炉体的滞留时间以及渗透毛坯的时间。该理论计算所得的CVD过程中毛坯孔隙度变化与实际生产过程中的孔隙度变化趋势一致,表明该研究理论分析结果具有较高的可信度。

关 键 词:化学气相沉积  滞留时间  微分方程
收稿时间:28 December 2010

Mathematical model for precursor gas residence time in isothermal CVD process of C/C composites
Shu YU,Zhou-shun ZHENG,Fu-qing ZHANG,Yong-qiang CAI.Mathematical model for precursor gas residence time in isothermal CVD process of C/C composites[J].Transactions of Nonferrous Metals Society of China,2011,21(8):1833-1839.
Authors:Shu YU  Zhou-shun ZHENG  Fu-qing ZHANG  Yong-qiang CAI
Affiliation:aState Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China;bSchool of Mathematical Science and Computational Technology, Central South University, Changsha 410083, China
Abstract:In the chemical vapor deposition (CVD) process of C/C composites, the dynamics and mechanism of precursor gas flowing behavior were analyzed mathematically, in which the precursor gas was infiltrated by the pressure difference of the gas flowing through felt. Differential equations were educed which characterized the relations among the pressure inside the felt, the pressure outside the felt of the precursor gas and the porosity of the felt as a function of CVD duration. The gas residence time during the infiltration process through the felt was obtained from the differential equations. The numerical verification is in good agreement with the practical process, indicating the good reliability of the current mathematical model.
Keywords:chemical vapor deposition  residence time  mathematical model
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