| 包覆结构CeO_2/SiO_2复合磨料的合成及其应用 |
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| 引用本文： | 陈杨,隆仁伟,陈志刚.包覆结构CeO_2/SiO_2复合磨料的合成及其应用[J].中国有色金属学报,2010,20(1). |
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| 作者姓名： | 陈杨 隆仁伟 陈志刚 |
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| 作者单位： | 1. 江苏工业学院,材料科学与工程学院,常州,213164;常州市高分子新材料重点实验室,常州,213164
2. 江苏工业学院,材料科学与工程学院,常州,213164 |
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| 基金项目： | 江苏省工业支撑计划资助项目，常州市工业科技攻关资助项目 |
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| 摘 要： | 以正硅酸乙酯水解所得的SiO_2微球为内核,采用均匀沉淀法制备具有草莓状包覆结构的CeO_2/SiO_2复合粉体.利用X射线衍射仪、透射电子显微镜、X射线光电子能谱仪(XPS)、动态光散射仪和Zeta电位测定仪等手段,对所制备样品的物相结构、组成、形貌和粒径大小进行表征.将所制备的包覆结构CeO_2/SiO_2复合粉体用于硅晶片热氧化层的化学机械抛光,用原子力显微镜(AFM)观察抛光表面的微观形貌,测量表面粗糙度,并测量材料去除率.结果表明:所制备的CeO_2/SiO_2复合颗粒呈规则球形,平均粒径为150~200 nm,CeO_2纳米颗粒在SiO_2内核表面包覆均匀.CeO_2颗粒的包覆显著地改变复合颗粒表面的电动力学行为,CeO_2/SiO_2复合颗粒的等电点为6.2,且明显地偏向纯CeO_2;CeO_2外壳与SiO_2内核之间形成Si-O-Ce键,两者产生化学键结合;抛光后的硅热氧化层表面在2 μm×2 μm范围内粗糙度为0.281 nm,材料去除率达到454. 6 nm/min.
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| 关 键 词： | CeO_2/SiO_2复合磨料 包覆 化学机械抛光 |
Synthesis and application of CeO_2-coated SiO_2 composite abrasives |
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| CHEN Yang,LONG Ren-wei,CHEN Zhi-gang.Synthesis and application of CeO_2-coated SiO_2 composite abrasives[J].The Chinese Journal of Nonferrous Metals,2010,20(1). |
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| Authors: | CHEN Yang LONG Ren-wei CHEN Zhi-gang |
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| Affiliation: | CHEN Yang1,2,LONG Ren-wei1,CHEN Zhi-gang1 (1.School of Materials Science , Engineering,Jiangsu Polytechnic University,Changzhou 213164,China,2.Key Laboratory of Polymer Materials,China) |
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| Abstract: | The SiO2 nanoparticles prepared by the hydrolyzing tetraethylorthosilicate were directly coated with CeO2 by chemical precipitation technique.The as-prepared samples were analyzed with X-ray diffractometry(XRD),transmission electron microscope,X-ray photoelectron spectrometer,dynamic light scatter and Zeta potential analyzer.The thermal oxide film covered silicon wafer was polished by CeO2-coated SiO2 composite abrasives,and the polishing behavior of the novel composite abrasives was characterized by atomic... |
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| Keywords: | CeO_2-coated SiO_2 composite abrasives coating chemical mechanical polishing |
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