Properties of TiNxfilms reactively sputtered in an argon-nitrogen atmosphere |
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| Authors: | Witold Posadowski Lubomiła Król-Stȩpniewska Zbigniew Ziołowski |
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| Affiliation: | Institute of Electronic Technology, Technical University of Wroc?aw, 50-372 Wroc?aw ul. Janiszewskiego 11/17, Poland;Institute of Iron Metallurgy, 44-100 Gliwice, ul. Karola Miarki 12, Poland |
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| Abstract: | The dependence of the resistivity and temperature coefficient of resistivity (TCR) of TiNx films on nitrogen pressure is described. The partial nitrogen pressure was varied from 10?5 Torr to 2×10?4 Torr. The maximum value of the resistivity (216 μΩ cm) and the lowest negative value of TCR (?33ppmK?1) were obtained in the nitrogen pressure range (2?4)×10?5 Torr. The minimum value of the resistivity (44 μΩ cm) and the highest positive value of the TCR (1160 ppm K-1 were obtained in the nitrogen pressure range (4?10)×10?5 Torr. The influence of aging temperature up to 573 K on the resistance changes are shown. X-ray diffraction analysis indicated the presence of oriented or non-oriented TiN in these films. |
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