Hole transport properties of p-type polycrystalline ZnO film using a dual-acceptor doping method with lithium and nitrogen |
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Authors: | XH Wang B Yao ZP Wei ZZ Zhang YM Lu JY Zhang |
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Affiliation: | a School of Mechanical Engineering, Shanghai Dianji University, Shanghai 200240, PR China b Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun,130033, PR China |
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Abstract: | Hole transport properties of p-type polycrystalline ZnO film using a dual-acceptor doping method with lithium and nitrogen (denoted as ZnO:(Li, N)) were investigated by the temperature-dependent Hall-effect measurements. The hole mobility of the ZnO:(Li, N) firstly increases with increasing temperature from 85 to 140 K, and then decreases from 140 to 300 K. The comparison of experimental results and theoretical models shows that the mobility at temperature below 140 K is mainly affected by the grain boundary scattering, whereas the hole mobility above 140 K is dominated by mixed scatterings, involving lattice vibration, dislocation, and ionized impurity. |
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Keywords: | Polycrystalline film Transport properties P-type ZnO Hall-effect measurement |
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