| 硼轻掺杂对a-Si∶H光电导层性能影响的研究 |
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| 引用本文： | 钱祥忠.硼轻掺杂对a-Si∶H光电导层性能影响的研究[J].真空科学与技术学报,2001,21(3):254-257. |
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| 作者姓名： | 钱祥忠 |
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| 作者单位： | 电子科技大学光电子技术系;淮南工业学院数理系 |
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| 基金项目： | 安徽省自然科学基金资助项目(99JL0191) |
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| 摘 要： | 用等离子体增强化学气相沉积法制备了厚为1μm左右的B轻掺杂a-Si∶H光电导层，得到了a-Si∶H的暗电导率与淀积工艺参数和B掺杂比关系的实验曲线，利用该曲线确定了最佳工艺参数和最佳掺杂比。测量了最佳参数下淀积的a-Si∶H薄膜的电学和光学性能及其受掺杂比的影响。结果表明，当B掺杂比增大时，a-Si∶H的暗电导率先减小后增大，并可发生几个数量级的变化。光电导率减小，折射率略有降低，线性吸收系数显著增大，光学带隙减小。测量的数据表明，我们制备的B轻掺杂a-Si∶H光电导层满足投影机用液晶光阀的要求。
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| 关 键 词： | 硼轻掺杂 a-Si∶H光导层 掺杂比 等离子体增强化学气相沉积 |
| 文章编号： | 0253-9748(2001)03-0254-04 |
| 修稿时间： | 2000年11月28 |
Influence of Light-doped Boron on Characteristics of a-Si∶H Photoconductive Layers |
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| Qian Xiangzhong.Influence of Light-doped Boron on Characteristics of a-Si∶H Photoconductive Layers[J].JOurnal of Vacuum Science and Technology,2001,21(3):254-257. |
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| Authors: | Qian Xiangzhong |
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| Affiliation: | Qian Xiangzhong Department of Opto electronics Technology,University of Electronic Science and Technology,Chengdu,610054, Department of Mathematics and Physics,Huainan Institute of Technology,Huainan,232001 |
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| Abstract: | The a-Si∶H photoconductive layers,about 1 μm in thickness and light doped with boron,were grown by plasma enhanced chemical vapor deposition (PECVD).The dark conductivity of the film was studied to optimize the film growth parameters,such as the doping ratio,film growth rate and deposition rate.The electric and optic characteristics of the films grown at the optimized doping ratio were discussed and their dependence on the doping ratio was also discussed.The results show that as the doping ratio increases,the dark conductivity of the film first rapidly decreases,reaching a certain minimum,then increases sharply again,its variation can be as high as several orders of magnitude.We think that the a-Si∶H films,light-doped with boron,meet the technical requirements of the liquid crystal light valve used in projectors. |
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