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脉冲激光沉积法制备立方焦绿石结构的Bi1.5ZnNb1.5O7薄膜
引用本文:张效华,辛凤,胡跃辉,杨丰,陈义川,范跃农,曾庆明.脉冲激光沉积法制备立方焦绿石结构的Bi1.5ZnNb1.5O7薄膜[J].真空科学与技术学报,2012,32(3):232-235.
作者姓名:张效华  辛凤  胡跃辉  杨丰  陈义川  范跃农  曾庆明
作者单位:景德镇陶瓷学院机械与电子工程学院 景德镇 333000
摘    要:采用固相反应法合成具有焦绿石立方结构的Bi1.5ZnNb1.5O7(BZN)陶瓷靶材,采用脉冲激光沉积法在Pt/SiO2/Si(100)基片制备立方BZN薄膜。研究了随衬底温度的变化,薄膜的结晶性能,微观形貌以及介电性能的差异。结果表明当衬底温度在550~650℃时,薄膜具有纯的立方BZN结构,并且在600℃时薄膜的晶粒发育比较完整,此时薄膜具有较高的介电常数和较低的损耗。

关 键 词:Bi1.5ZnNb1.5O7薄膜  脉冲激光沉积  微结构  介电性能

Growth of Cubic Bi1.5Zn1.0Nb1.5O7Films by Pulsed Laser Deposition
Zhang Xiaohua , Xin Feng , Hu Yuehui , Yang Feng , Chen Yichuan , Fan Yuenong , Zeng Qingming.Growth of Cubic Bi1.5Zn1.0Nb1.5O7Films by Pulsed Laser Deposition[J].JOurnal of Vacuum Science and Technology,2012,32(3):232-235.
Authors:Zhang Xiaohua  Xin Feng  Hu Yuehui  Yang Feng  Chen Yichuan  Fan Yuenong  Zeng Qingming
Affiliation:(Department of Mechanical and Electronic Engineering,Jingdezhen Ceramic Institute,Jingdezhen 333000,China)
Abstract:The cubic Bi1.5ZnNb1.5O7(BZN) ceramic targets were fabricated by sintering a mixture of high purity Bi2O3,ZnO,and Nb2O5powders;and the cubic BZN films were grown by pulsed laser deposition.The impacts of the film growth conditions,such as the substrate temperature,power of the pulsed laser,and deposition rate,on the microstructures and properties of the BZN films were evaluated.The BZN films were characterized with X-ray diffraction,atomic force microscopy and other conventional surface probes.The results show that the substrate temperature strongly affects the surface morphology and dielectric properties of the BZN films.At a substrate temperature ranging from 550~650℃,the film has a dominant cubic pyrochlore phase.And at 600℃,the compact films with fairly uniform crystal grains have a high dielectric constant and a low loss.
Keywords:BZN thin films  Pulsed laser deposition  Microstructure  Dielectric property
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