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中频反应磁控溅射沉积Al2O3薄膜中迟滞回线的研究
引用本文:廖国进,巴德纯,闻立时,刘斯明,阎绍峰.中频反应磁控溅射沉积Al2O3薄膜中迟滞回线的研究[J].真空,2007,44(3):32-35.
作者姓名:廖国进  巴德纯  闻立时  刘斯明  阎绍峰
作者单位:1. 东北大学,机械与自动化学院,辽宁,沈阳,110004;辽宁工学院,机械与自动化学院,辽宁,锦州,121001
2. 东北大学,机械与自动化学院,辽宁,沈阳,110004
3. 中国科学院金属研究所,表面工程部,辽宁,沈阳,110016
4. 北京航空航天大学,机械与自动化学院,北京,100083
5. 辽宁工学院,机械与自动化学院,辽宁,锦州,121001
摘    要:采用中频磁控反应溅射工艺进行氧化铝薄膜的沉积实验,对该工艺过程中溅射电压和沉积速率与氧流量的“迟滞回线”现象进行了研究。通过对实验现象的分析讨论,解释了薄膜沉积速率变化的原因。

关 键 词:迟滞回线  反应溅射  中频溅射  氧化铝薄膜
文章编号:1002-0322(2007)03-0032-04
修稿时间:2006-10-15

On the hysteresis loop in deposition of Al2O3 films prepared by medium-frequentcy reactive magnetron sputtering
LIAO Guo-jin,BA De-chun,WEN Li-shi,LIU Si-ming,YAN Shao-feng.On the hysteresis loop in deposition of Al2O3 films prepared by medium-frequentcy reactive magnetron sputtering[J].Vacuum,2007,44(3):32-35.
Authors:LIAO Guo-jin  BA De-chun  WEN Li-shi  LIU Si-ming  YAN Shao-feng
Affiliation:1. School of Mechanical Engineering and Automation, Northeastern University, Shenyang 110004,China 2. School of Mechanical Engineering and Automation, Liaoning Institute of Industry, jinzhou 121001, China ; 3. Department of surface engineering, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016,China; 4. Shool of Mechanical Engineering and Automation, Beijing University of Aeronautics and Astronautics, Beijing 100083,China
Abstract:Aluminum oxides films were grown by medium-frequency reactive magnetron sputtering.Hysteresis loop observed in the relationship between the sputtering voltage(or the film deposition rate)and the oxygen flow rate was studied.Influence of oxygen partial pressure on oxide layer in the sputtered areas on target surfaces may account for the change in film deposition rate.
Keywords:hysteresis loop  reactive sputtering  medium-frequency sputtering  aluminum oxide film
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