| 溅射功率对ZnO:Al薄膜光电性能的影响 |
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| 引用本文： | 代海洋,陈镇平,冯雪磊,董群喜,李永.溅射功率对ZnO:Al薄膜光电性能的影响[J].真空,2012,49(4):55-58. |
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| 作者姓名： | 代海洋 陈镇平 冯雪磊 董群喜 李永 |
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| 作者单位： | 郑州轻工业学院技术物理系,河南郑州,450002 |
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| 基金项目： | 河南省自然科学基金资助项目 |
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| 摘 要： | 采用射频磁控溅射工艺,以Al掺杂ZnO(ZAO)陶瓷靶为靶材在石英玻璃基片上制备出具有优良光电性能的ZAO透明导电薄膜,研究了溅射功率对薄膜光电性能的影响。在不同溅射功率条件下制备的ZAO薄膜具有很好的c轴择优取向。较大功率溅射有利于薄膜晶粒尺寸的增大、电阻率降低。ZAO薄膜在可见光区的透过率平均值高达90%以上,受溅射功率影响不大。在340nm-420nm波长附近ZAO薄膜透过率急剧下降,呈现明显的紫外吸收边;高的溅射功率提高了ZAO薄膜的光学带隙宽度。
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| 关 键 词： | 溅射功率 ZAO薄膜 电阻率 透过率 光学带隙 |
Influence of sputtering power on photoelectrical properties of ZnO: Al thin films |
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| DAI Hai-yang
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CHEN Zhen-ping
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FENG Xue-lei
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DONG Qun-xi
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LI Yong.Influence of sputtering power on photoelectrical properties of ZnO: Al thin films[J].Vacuum,2012,49(4):55-58. |
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| Authors: | DAI Hai-yang CHEN Zhen-ping FENG Xue-lei DONG Qun-xi LI Yong |
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| Affiliation: | (Department of Technology and Physics,Zhengzhou University of Light Industry,Zhengzhou 450002,China) |
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| Abstract: | ZAO transparent conductive thin films with good photoelectrical properties on quartz glass substrate were prepared by RF magnetron sputtering using ZAO ceramic target.The influence of sputtering power on the photoelectrical properties of ZAO films were studied.It was found that all the films deposited under different sputtering power were with preferred c-axis orientation.With the increase of sputtering power,the grain size increases and the resistivity decreases.The average transmissivity of ZAO films is above 90% which is little affected by the sputtering power in the visible range.The transmissivity of ZAO thin films decreased sharply in the vicinity of 340nm ~420nm wavelength,showing a significant UV absorption edge.In addition,the optical band gap width of ZAO thin film is improved by increasing the sputtering power. |
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| Keywords: | sputtering power ZAO film resistivity transmissivity optical band gap |
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