Preparation of CrN thick films by high-rate middle-frequency unbalanced magnetron sputtering |
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| Affiliation: | 1. Accelerator Laboratory, Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, 430072 Wuhan, China;2. School of Power & Mechanical Engineering, Wuhan University, 430072 Wuhan, China;1. Uppsala University, Ångström Laboratory, Division of Electricity, Plasma Group, Box 534, SE-751 21, Uppsala, Sweden;2. BB Plasma Design AB, Ulleråkersvägen 64, SE-756 43, Sweden;1. Institute of High Current Electronics, Russian Academy of Sciences, Tomsk, 2/3 Akademichesky Ave., 634055, Russia;2. Tomsk State University of Control Systems and Radioelectronics, Tomsk, 40 Lenin Ave., 634050, Russia;1. Department of Applied Health and Professional Development, Faculty of Health and Life Sciences, Oxford Brookes University, United Kingdom;2. NIHR Clinical Research Network: Thames Valley and South Midlands, United Kingdom;1. Center for Regional Environmental Research, National Institute for Environmental Studies, Japan;2. School of Environment, Tsinghua University, China;3. State Environmental Protection Key Laboratory of Sources and Control of Air Pollution Complex, China;4. Atmospheric Environment Group, Center for Environmental Science in Saitama, Japan;5. Center for Environmental Measurement and Analysis, National Institute for Environmental Studies, Japan;6. Graduate School of Maritime Sciences, Kobe University, Japan;7. Department of Earth, Atmospheric and Planetary Sciences, Massachusetts Institute of Technology, USA;1. Advanced Biomedical Imaging Research Center, Kobe University Graduate School of Medicine, 7-5-2 Kusunoki-cho, Chuo-ku, Kobe, Hyogo 650-0017, Japan;2. Division of Functional and Diagnostic Imaging Research, Department of Radiology, Kobe University Graduate School of Medicine, Kobe, Hyogo, Japan;3. Division of Radiology, Department of Radiology, Kobe University Graduate School of Medicine, Kobe, Hyogo, Japan;4. Department of Radiology, Graduate School of Medical Science, University of the Ryukyus, Okinawa, Japan |
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| Abstract: | A middle-frequency (MF) unbalanced magnetron sputtering system equipped with an electron source was designed and used for deposition of CrN thick films under various MF power (1.4–14 kW) at fixed temperature, pressure, and gas flow rate. The deposition rate was increased with increasing MF power and the structure and N/Cr ratio of the deposited CrN films exhibited a complicated behavior, where the CrN films were a polycrystalline structure and the films deposited under optimized conditions exhibited a dense columnar structure and a micro-hardness of 16 GPa. The dependence of the structure and micro-hardness on MF power was interpreted by the power deposition efficiency. |
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