Stacking faults in an epitaxially grown PbTiO3 thick film and their size distribution |
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| Authors: | Kenta Aoyagi Yumiko Kodama Takanori Kiguchi Yoshitaka Ehara Hiroshi Funakubo Toyohiko J Konno |
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| Affiliation: | 1. Department of Materials Science, Tohoku University, 6-6 Aramaki Aza Aoba, Aoba-Ku, Sendai 980-8579, Japan;2. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan;3. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-Ku, Yokohama 226-8503, Japan |
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| Abstract: | The microstructure of an epitaxial PbTiO3 thick film, grown on a SrRuO3/SrTiO3 substrate at 600 °C by pulsed-MOCVD method, was investigated by using transmission electron microscopy. A number of extrinsic or intrinsic stacking faults were observed in the epitaxial PbTiO3 thick film and they were parallel to the (0 0 1) plane of the PbTiO3. We also investigated the size distribution of these stacking faults. The width of these stacking faults along the 1 0 0] axis of the PbTiO3 was very small, ranging from 2 to 13 nm. It was also revealed that the size distribution of stacking faults depends on the position in the film: near the surface, near the substrate, near threading dislocations, and near 90° domain boundaries. |
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