| 超微细光刻中偏振光成像研究 |
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| 引用本文： | 余国彬,姚汉民,罗先刚,严佩英.超微细光刻中偏振光成像研究[J].光电工程,2003,30(5):1-3,10. |
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| 作者姓名： | 余国彬 姚汉民 罗先刚 严佩英 |
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| 作者单位： | 中国科学院光电技术研究所,四川,成都,610209 |
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| 基金项目： | 国家自然科学基金资助项目 (60078005) |
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| 摘 要： | 在大数值孔径、短波长的投影光学光刻系统中，对S偏振光、P偏振光和非偏振光在硅片上的成像进行了研究，发现S偏振光成像具有最高的光强对数斜率值和最大的对比度；模拟了S偏振光通过掩模的电场分布机理，结果表明，可以通过调制照明光的偏振性来提高成像对比度和分辨力。
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| 关 键 词： | 超微细光刻 偏振光 像质 数值孔径 |
| 文章编号： | 1003-501X(2003)05-0001-03 |
| 收稿时间： | 2003/4/9 |
A Study on Polarized Light Imaging in Super-Microlithography |
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| YU Guo-bin,YAO Han-min,LUO Xian-gang,YAN Pei-ying.A Study on Polarized Light Imaging in Super-Microlithography[J].Opto-Electronic Engineering,2003,30(5):1-3,10. |
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| Authors: | YU Guo-bin YAO Han-min LUO Xian-gang YAN Pei-ying |
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| Abstract: | Research on imaging with polarized light S, polarized light P and unpolarized light on wafer are carried out in a large aperture and short wavelength projection optical lithographic system. It is discovered that polarized light S has the highest light intensity logarithmic slope and maximum contrast. The electric field distribution mechanism for polarized light S passing through mask is simulated. The results show that imaging contrast and resolving power can be improved through modulating polarization of illumination light. |
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| Keywords: | Super-microlithography Polarized light Image quality NA |
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