| 工艺参数对氧化铟锡薄膜光电性能的影响 |
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| 引用本文： | 常天海.工艺参数对氧化铟锡薄膜光电性能的影响[J].真空与低温,2002,8(4):211-214. |
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| 作者姓名： | 常天海 |
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| 作者单位： | 华南理工大学,电信学院,广东,广州,510640 |
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| 摘 要： | 研究了磁控溅射陶瓷靶制备氧化铟锡薄膜时优化工艺参数的重要性,通过实验和理论分析了几个主要工艺参数对氧化铟锡薄膜光电性能的影响,给出了基底温度、溅射电压、氧含量等参数的最佳范围。结果表明,只有当工艺参数位于最佳范围时,才能制备出光电性能最佳的氧化铟锡薄膜。
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| 关 键 词： | 磁控溅射 工艺参数 氧化铟锡 光电性能 |
| 文章编号： | 1006-7086(2002)04-0211-04 |
| 修稿时间： | 2002年6月16日 |
THE INFLUENCE OF TECHNICS PARAMETERS ON THE OPTICAL AND ELECTRIC PERFORMANCE OF INDIUM TIN OXIDE |
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| CHANG Tian\|hai.THE INFLUENCE OF TECHNICS PARAMETERS ON THE OPTICAL AND ELECTRIC PERFORMANCE OF INDIUM TIN OXIDE[J].Vacuum and Cryogenics,2002,8(4):211-214. |
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| Authors: | CHANG Tian\|hai |
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| Abstract: | The importance of optimizing technics parameters has been studied when indium tin oxide film prepared by magnetron sputtering ceramic target. The influences of several primary technics parameters on the optical and electric performance of indium tin oxide film have been analyzed by experiments and theories. The test ranges of substrate temperature, sputtering voltage and oxygen content have been given. These results showed that indium tin oxide film with the best optical and electric performance could be prepared only when technics parameters in best ranges. |
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| Keywords: | magnetron sputtering technics parameters indium tin oxide optical and electric performance |
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