Microcrystalline silicon films fabricated by bias-assisted hot-wire chemical vapor deposition |
| |
Authors: | Lei Zhang Honglie Shen Jiayi You Xuefan Jiang Bin Qian Zhida Han |
| |
Affiliation: | 1. Department of Physics, Changshu Institute of Technology, Changshu, 215500, China 2. College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing, 210016, China
|
| |
Abstract: | Microcrystalline silicon films (μc-Si:H) were deposited on stainless steel substrates by bias-assisted hot-wire chemical vapor deposition. The effect of substrate bias and substrate temperature on the crystallinity of μc-Si:H films was studied by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The results show that both the Raman peak position and the crystalline fraction of the μc-Si:H films deposited at 200 °C were obviously improved by introducing ?800 V substrate bias. The films deposited at 200 °C with ?800 V substrate bias show strongly sharpened Si (111) peak together with Si (220) and Si (311) peaks, which was different from a weak Si (111) peak for those deposited without substrate bias. By increasing the substrate temperature from 200 to 300 °C, while keeping the substrate bias at ?800 V, the crystallinity of the silicon films was further improved, and μc-Si:H films with crystalline fraction of 74 % was obtained. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|