一种对在片测量系统中串扰误差进行修正的新型校准方法

现有高频段在片S参数校准方法有16-term误差模型校准方法和基于多线TRL的二次串扰修正算法,它们对测试系统之间的串扰误差进行了较好的表征。提出了一种新型校准方法,即把测试系统之间的串扰等效为一个与被测件并联的二端口网络。整个校准方法一共分为两步,第一步采用常规的SOLR校准方法得到基本8项误差模型,第二步通过测量一个串扰标准件(可以是SOLR中的开路校准件)完成对串扰误差的表征。仿真和测试结果表明,新型校准方法准确度可达到16-term误差模型的准确度,并对串扰误差具有相当的抑制效果。同时,新模型方法只需使用4个校准件,数量少于传统16-term误差模型方法,在保证准确度的前提下,提高了测试效率。

A Novel Calibration Method at On-Wafer Measurement System Affected by Leakage

The conventional calibration method for high frequency on-wafer scattering parameters comprises 16-term error model and two-tier crosstalk correction method based on Multiline TRL, both of which did well at charactering the leakage in measurement system. A novel method is proposed here, taking the leakage in measurement system as a parallel two-port network with the device under test (DUT). The method is divided into two parts. Firstly apply the SOLR calibration method to obtain the eight-term basic error box, then measure a crosstalk standard (could be an open standard in SOLR) to deduce the crosstalk error box. Simulation and measurement results show that, the accuracy of the novel method is comparative to the 16-term method with four less calibration kits, and has a positive response at the crosstalk, and also the novel method improved test efficiency.