| Abstract: | The flourishing metal-oxide high-k dielectric materials have been regarded as the vital components of low voltage operated flexible transparent electronic devices.We herein report that ytterbium oxide(Yb2O3)and ZnSnO(ZTO)thin films were firstly integrated into ZTO-based thin film transistors(TFTs)with superior performance.Results have indicated that the 500℃-annealed ZTO/Yb2O3 TFTs possess the large saturation mobility of 9.1 cm2 V-1 S-1 and the high on/off current ratio of 2.15×107,which even surpass those of reported In-based TFTs.The deteriorative electrical properties in the aging process can be attributed to the carrier capture mechanism.However,the 460℃-processed TFTs demonstrate a tenfold increase in saturated mobility and an increase in on/off current ratio after 10 days aging.The inspiring electrical properties are attributed to the diffusion-activated carrier enhancement mechanism and electrons donor role of water molecular,which introduces a facile method to boost the device per-formance at lower processing temperatures.The neglected threshold voltage variations of 0.06 V and-0.2 V have been detected after bias stability experiments.The superior bias stability can be attributed to the charge delay effect induced by the continuous electric field.Meanwhile,the ultrahigh on/off cur-rent ratio of 1.1 x 107 and the recoverable transferring performance have verified the aging-activated mechanism.To confirm its potential application in digital circuits,a resistor-loaded inverter with gain of 5.6 has been constructed and good dynamic response behavior have been detected at a low voltage of 2 V.As a result,it can be concluded that the high temperature annealing TFTs need immediate encapsula-tion,while the performance of the lower temperature processing samples can be optimized after aging treatment,indicating the potential prospect in low power consumption large-scale flexible transparent devices. |
