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| PECVD法生长氮化硅工艺的研究 | |
| 引用本文： | 吴清鑫,陈光红,于映,罗仲梓.PECVD法生长氮化硅工艺的研究[J].功能材料,2007,38(5):703-705,710. |
| 作者姓名： | 吴清鑫 陈光红 于映 罗仲梓 |
| 作者单位： | 1. 苏州市职业大学,电子信息工程系,江苏,苏州,215104 2. 福州大学,物理与电信工程学院,福建,福州,350002 3. 厦门大学,萨本栋微机电研究中心,福建,厦门,361005 |
| 基金项目： | 国家基金青年基金 , 福建省自然科学基金 |
| 摘 要： | 采用了等离子体增强化学气相沉积法(plasma-enhanced chemical vapor deposition,PECVD)在聚酰亚胺(polyimide,PI)牺牲层上生长氮化硅薄膜,讨论沉积温度、射频功率、反应气体流量比等工艺参数对氮化硅薄膜的生长速率、氮硅比、残余应力等性能的影响,得到适合制作接触式射频MEMS开关中悬梁的氮化硅薄膜的最佳工艺条件. |
| 关 键 词： | PECVD 氮化硅 聚酰亚胺 残余应力 射频MEMS开关 |
| 文章编号： | 1001-9731（2007）05-0703-03 |
| 修稿时间： | 2006-10-182007-01-31 |
The study on technology for the silicon nitride thin films by PECVD |
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| WU Qing-xin,CHEN Guang-hong,YU Ying,LUO Zhong-zi.The study on technology for the silicon nitride thin films by PECVD[J].Journal of Functional Materials,2007,38(5):703-705,710. | |
| Authors: | WU Qing-xin CHEN Guang-hong YU Ying LUO Zhong-zi |
| Affiliation: | 1. Department of Electronic Information Engineering, Suzhou Vocational University, Suzhou 215104, China; 2. Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002,China; 3. Pen-Dung Sah MEMS Research Center,Xiamen University,Xiamen 361005,China |
| Abstract: | The silicon nitride thin films are deposited on polyimide sacrificial layer by PECVD. The influence of the process parameters such as temperature,power,the ratio flux of reactant on the residual stress and other characteristics of silicon nitride thin films are discussed. The optimum process condition is obtained,and the silicon nitride thin films deposited by the process condition have been successfully applied in RF MEMS switch. |
| Keywords: | PECVD silicon nitride polyimide residual stress RF MEMS switch |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |
