| 镧掺杂对PZT铁电薄膜漏电学特性的影响 |
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| 引用本文： | 程继,林殷茵,汤庭鳌.镧掺杂对PZT铁电薄膜漏电学特性的影响[J].功能材料,2004,35(6):692-694,697. |
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| 作者姓名： | 程继 林殷茵 汤庭鳌 |
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| 作者单位： | 复旦大学,微电子学系,专用集成电路及系统国家重点实验室,上海,200433;复旦大学,微电子学系,专用集成电路及系统国家重点实验室,上海,200433;复旦大学,微电子学系,专用集成电路及系统国家重点实验室,上海,200433 |
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| 基金项目： | 国家自然科学基金资助项目(60206005)，上海青年科技基金资助项目(02QD14009) |
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| 摘 要： | 研究了镧掺杂对PZT铁电性能和相结构的影响。研究表明镧掺杂增加了(110)和(200)峰的强度，减小了(111)峰的相对强度，导致矫顽场和极化强度的下降。研究了镧掺杂对漏电特性的影响，以及肖特基势垒电流模型。
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| 关 键 词： | PZT 矫顽场 极化强度 漏电模型 |
| 文章编号： | 1001-9731(2004)06-0692-03 |
The effects of lanthanum's doping on PZT thin film leakage current characteristics |
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| CHENG Ji,LIN Yin-yin,TANG Ting-ao,Fudan University,Shanghai ,China.The effects of lanthanum's doping on PZT thin film leakage current characteristics[J].Journal of Functional Materials,2004,35(6):692-694,697. |
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| Authors: | CHENG Ji LIN Yin-yin TANG Ting-ao Fudan University Shanghai China |
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| Affiliation: | CHENG Ji,LIN Yin-yin,TANG Ting-ao,Fudan University,Shanghai 200433,China) |
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| Abstract: | In this paper we study the Lanthanum doping effects on ferroelectric properties and structures phase of PZT thin film. XRD indicates that Lanthanum addition increases (110) and (200) diffraction intensity and decreases the relative intensity of (111) diffraction peak which leads the reduction of coercive field and polarization strength of PZT thin film. The effects of Lanthanum doping on leakage current characteristics were also studied by Shottky model. |
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| Keywords: | PZT coercive field polarization strength leakage current model |
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