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| 影响多孔硅孔隙率的因素 | |
| 引用本文： | 涂楚辙,江从春,贾振红,陶明德,宋世庚.影响多孔硅孔隙率的因素[J].功能材料,2000,31(2):139-141. |
| 作者姓名： | 涂楚辙 江从春 贾振红 陶明德 宋世庚 |
| 作者单位： | 1. 新疆大学物理系 2. 电子信息科学系,新疆,乌鲁木齐830046 3. 中国科学院新疆物理研究所,新疆,乌鲁木齐830011 |
| 基金项目： | 国家自然科学基金，新疆自然科学基金 |
| 摘 要： | 研究了在制备多孔硅过程中影响其孔隙率的各种因素 ,给出了氢氟酸浓度、腐蚀时间、阳极腐蚀电流、温度及光照度与多孔硅孔隙率的关系 ,同时研究了多孔硅的晶格常数随其孔隙率变化的规律 ,并对以上各项结果作出了初步解释。 |
| 关 键 词： | 多孔硅 孔隙率 影响因素 晶格常数 |
| 文章编号： | 1001—9731(2000)02－0139－03 |
| 修稿时间： | 1998－10－28 |
Influential Factors on Porosity of Porous Silicon |
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| Tu Chuzhe,JIANG Congchun,JIA Zhenhong,TAO Mingde,SONG Shigeng.Influential Factors on Porosity of Porous Silicon[J].Journal of Functional Materials,2000,31(2):139-141. | |
| Authors: | Tu Chuzhe JIANG Congchun JIA Zhenhong TAO Mingde SONG Shigeng |
| Affiliation: | Tu Chuzhe (Department of Physics)JIANG Congchun ,JIA Zhenhong (Department of Electronics and Information Science, Xinjiang University, Urumqi, 830046, China)TAO Mingde ,SONG Shigeng (Xinjiang lnstitute of Physics, Chinese Academy of Science, Urumqi, 830011 China) |
| Abstract: | The influence of making method and formed conditions on porosity of porous silicon (PS) has been studied in this paper,and the relationships of porosity of PS to concentration of hydrofluoric acid (HF)-ethanol solution,temperature of electrolyte,etching electric current,etching temperature,and light irradiation have been provided by experiment and all the results were explained. |
| Keywords: | porous silicon porosity influence |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |
