Infrared focal plane assemblies based on HgCdTe/Si(310) heterostructure |
| |
| Authors: | M V Yakushev V S Varavin V V Vasil’ev S A Dvoretsky A V Predein I V Sabinina Yu G Sidorov A V Sorochkin A O Suslyakov |
| |
| Affiliation: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia |
| |
| Abstract: | It is demonstrated for the first time that high-performance scanning infrared (IR) focal plane assemblies of the 288 × 4 format
for long-wavelength (8–12 μm) IR spectral range can be created based on a Cd
x
Hg1 − x
Te/Si(310) heterostructure. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
