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基于外存性能模型的多通道并行I/O
引用本文:刘鹏,李三立.基于外存性能模型的多通道并行I/O[J].通讯和计算机,2005,2(10):1-5.
作者姓名:刘鹏  李三立
作者单位:[1]清华大学计算机科学与技术系,北京100084 [2]解放军理工大学军事网格研究中心,南京210007
基金项目:本文得到国家自然科学基金项目(No.60403043)的资助.
摘    要:I/O部分一直是制约计算机系统整体性能提升的瓶颈。本文提出外存性能模型,用于定量分析外存的I/O性能并帮助克服I/O瓶颈,并在此基础上,提出用多通道I/O克服PCI总线瓶颈。采用多钱程控制和异步I/O技术,使所有通道的磁盘并行工作。对比实.验表明,最大顺序读性能提升了46%,顺序写提升48%,随机读提升4%,随机写提升57%。

关 键 词:I/O  PCI  外存性能模型  多通道

Multi-channel Parallel I/O Based on Secondary Storage Performance Model
Peng Liu, Sanli Li.Multi-channel Parallel I/O Based on Secondary Storage Performance Model[J].Journal of Communication and Computer,2005,2(10):1-5.
Authors:Peng Liu  Sanli Li
Abstract:The I/O part has been the bottleneck of the performance of whole computer system for many years A quantitative approach, the Secondary Storage Performance Model, is put forward to evaluate the performance of secondary storage and overcome the I/O bottlenecks. Based on the model, a method that surpasses the bottleneck of PCI bus by using multi-channel I/O is advocated. With multi-threads control and asynchronous I/O technique, the disks connected on different channels can work in parallel. A comparative experiment shows, the highest performance of sequential read, sequential write, random read and random write have been improved by 46%, 48%, 40/, and 57% respectively.
Keywords:I/O  PCI  Secondary Storage Performance Model  Multi-channel
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