PECVD 工艺中氮化硅薄膜龟裂研究

PE 氮化硅薄膜优异的物理、化学性能使其在半导体分立器件、IC 电路中常被用作绝缘层、钝化层而使用。然而，氮化硅龟裂问题是影响其作为钝化层使用的阻碍因素，因此，科学的氮化硅工艺条件对其薄膜质量的影响非常关键。给出了等离子体化学气相淀积（PECVD）氮化硅薄膜技术的原理，通过实验验证，确定了诱发氮化硅龟裂现象的原因，优化工艺条件，确定了 PECVD氮化硅的最佳工艺条件，杜绝了龟裂现象对氮化硅作为钝化层使用的影响。

Research of Silicon Nitride Thin Film Cracking in Technical Process PECVD

PE silicon nitride film,because of its excellent physical and chemical properties,is widely used in discrete semiconductor devices and IC circuit as an insulating layer and the passivation layer.However,the problem of silicon nitride cracking affects it used as the passivation layer,so the scientific process conditions should be kept to ensure the quality of the silicon nitride film.The paper presents the principle of a plasma chemical vapor deposition （PECVD）silicon nitride thin film,finds the reason of the nitrogen -induced silicon cracking,and optimizes the process conditions to prevent from cracking of the silicon nitride for good passivation layer.