一种二阶温度补偿的CMOS带隙基准电路

提出了一种可用于标准CMOS工艺下且具有二阶温度补偿电路的带隙基准源。所采用的PTAT2电流电路是利用了饱和区MOSFET的电流特性产生的,具有完全可以与标准CMOS工艺兼容的优点。针对在该工艺和电源电压下传统的启动电路难以启动的问题,引入了一个电阻,使其可以正常启动。基准核心电路中的共源共栅结构和串联BJT管有效地提高了电源抑制比,降低了温度系数。基于TSMC 0.35μm CMOS工艺运用HSPICE软件进行了仿真验证。仿真结果表明,在3.3V供电电压下,输出基准电压为1.2254V,温度系数为2.91×10-6V/℃,低频的电源抑制比高达96dB,启动时间为7μs。

A 2nd-order temperature compensated CMOS bandgap reference circuit

This paper proposes a 2-order temperature compensated CMOS bandgap reference circuit which can be used with a standard CMOS process. We adopt the PTAT2 current circuit, which makes use of the current characteristics of the saturated region of MOSFET and has the advantage of fully compatible with standard CMOS processes. Due to it＇s difficult to start tile circuit tbr this process and supply voltage, we introduce a resistance start properly. The cascade and serious BJT in the core of reference circuit improves the power supply rejection ratio and reduces the temperature coefficient effectively. We adopt the HSPICE software simulate all the circuit based on TSMC 0.35 Ixm CMOS process. The simulation results show that the temperature coefficient is 2.91x104 V/C and PSRR at low frequencies is up to 96 dB at 3.3 V power supply and startup time is 7 Ixs.