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半导体芯片电路线宽显微测量精度分析
引用本文:余厚云,邓善熙.半导体芯片电路线宽显微测量精度分析[J].微计算机信息,2004,20(9):112-113,18.
作者姓名:余厚云  邓善熙
作者单位:南京航空航天大学
摘    要:在显微图像的尺寸测量中.由于各种因素的影响.测量结果不可避免地存在着误差.为了充分认识并进而减小这些误差,提高测量精度.文章对标准件标定、显微光学系统的景深、对焦、光照亮度以及温度等影响测量结果的误差源作了细致的研究,给出了半导体芯片电路线宽显微测量结果及精度分析。

关 键 词:半导体芯片  显微测量  精度分析
文章编号:1008-0570(2004)09-0112-02

Analysis of the accuracy in the measurement for semiconductor wafer
Yu,Houyun Deng,Shanxi.Analysis of the accuracy in the measurement for semiconductor wafer[J].Control & Automation,2004,20(9):112-113,18.
Authors:Yu  Houyun Deng  Shanxi
Affiliation:Yu,Houyun Deng,Shanxi053 Department in College of Mechanical and Electrical Engineering in NanJing University of Aeronautics and Astronautics,210016
Abstract:The errors are inevitable in the micro-measurement of image because of many kinds of effects. Such effects are discussed in detail in this paper for reducing the errors and improving the precision of the measurement. Those include the calibration of the standard component, the depth of vision field, the focus and brightness of the optical system and the temperature. The accuracy of the measurement for semiconductor wafer is presented in the end.
Keywords:semiconductor wafer  micro-measurement  analysis of precision
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