| 基于LDMOS栅漏电容特性的研究 |
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| 引用本文： | 张志伟,高珊,陈军宁,罗扣.基于LDMOS栅漏电容特性的研究[J].电力电子技术,2012,46(3):90-92. |
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| 作者姓名： | 张志伟 高珊 陈军宁 罗扣 |
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| 作者单位： | 1. 安徽大学,电子信息工程学院,安徽合肥230039
2. 安徽大学 电子信息工程学院,安徽合肥,230039 |
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| 基金项目： | 国家自然科学基金(60876062)~~ |
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| 摘 要： | 此处主要对LDMOS栅漏电容(CGD)进行分析与计算,并借助二维器件模拟软件MEDICI模拟并分析了栅漏电容与漏源电压的关系,通过计算得到的数据与软件模拟结果的对比。研究了场极板长度、场氧化层厚度、P阱注入剂量,漂移区浓度4个结构工艺参数对栅漏电容的影响。
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| 关 键 词： | 栅漏电容 漂移区 场极板 |
An Investigation Into Gate-drain Capacitance Characteristics Based on LDMOS |
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| ZHANG Zhi-wei
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GAO Shan
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CHEN Jun-ning
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LUO Kou.An Investigation Into Gate-drain Capacitance Characteristics Based on LDMOS[J].Power Electronics,2012,46(3):90-92. |
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| Authors: | ZHANG Zhi-wei GAO Shan CHEN Jun-ning LUO Kou |
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| Affiliation: | (Anhui University,Hefei 230039,China) |
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| Abstract: | This paper focuses on the analysis of LDMOS gate-drain capacitance(CGD) and calculation,and with the two-dimensional device simulator MEDICI,the relationship between CGD of LDMOS and drain-source votalge is investigated.Effects of the gate-field-plate length,the thickness of plate oxide layer,the implant dosages of the drift region and p-well on CGD are also discussed. |
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| Keywords: | gate-drian capacitance drift region gate-field-plate |
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