| 基于SiC器件的三电平半桥单电感均压电路 |
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| 引用本文： | 崔恒斌,任海军,周涛.基于SiC器件的三电平半桥单电感均压电路[J].电源学报,2021,19(3):182-188. |
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| 作者姓名： | 崔恒斌 任海军 周涛 |
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| 作者单位： | 成都运达科技股份有限公司, 成都 611731,西南交通大学电气工程学院, 成都 611756,西南交通大学电气工程学院, 成都 611756 |
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| 基金项目： | 国家轨道交通电气化与自动化工程技术研究中心资助项目（NEEC-2019-A04） |
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| 摘 要： | 针对辅助变流器中充电机输入端支撑电容电压不均衡导致变压器出现磁饱和的问题,研究一种基于Si C MOSFET器件的单电感均压电路。对单电感均压电路的4种工作模态进行分析,通过两个开关管的互补导通,利用电感实现能量在支撑电容之间的重新分配,可实现支撑电容电压的均衡。对单电感均压电路的3种典型开关状态类型进行分析,并根据其开关状态类型计算单电感均压电路电感选取范围。仿真和小功率实验结果表明单电感均压电路具有较强的均压能力。
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| 关 键 词： | SiC MOSFET器件 单电感均压 辅助变流器 三电平半桥 |
| 收稿时间： | 2019/8/8 0:00:00 |
| 修稿时间： | 2021/4/30 0:00:00 |
Three-level Half-bridge One-inductor Voltage Balance Circuit Based on SiC Device |
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| CUI Hengbin,REN Haijun and ZHOU Tao.Three-level Half-bridge One-inductor Voltage Balance Circuit Based on SiC Device[J].Journal of power supply,2021,19(3):182-188. |
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| Authors: | CUI Hengbin REN Haijun and ZHOU Tao |
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| Affiliation: | Chengdu Yunda Technology Co. Ltd, Chengdu 611731, China,School of Electrical Engineering, Southwest Jiaotong University, Chengdu 611756, China and School of Electrical Engineering, Southwest Jiaotong University, Chengdu 611756, China |
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| Abstract: | Aimed at the problem of magnetic saturation of a transformer caused by the imbalance of supporting capacitor voltage in an auxiliary converter, a one-inductor voltage balance circuit based on SiC MOSFET device is studied. The four working modes of this circuit are analyzed. The two power switches are turned on in turn, and the redistribution of energy between two supporting capacitors is realized by the inductor, thus ensuring the balance between the two supporting capacitor voltages. Three typical types of the novel circuit''s switching state are analyzed, and its inductance range is calculated according to these types. Simulation and low-power experimental results show that the proposed circuit has a strong voltage balance capability. |
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| Keywords: | SiC MOSFET device one-inductor voltage balance auxiliary converter three-level half-bridge |
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