半导体GaN功率开关器件灵敏度测试技术

测试半导体GaN功率开关器件灵敏度对掌握器件性能具有重要意义，提出一种新的半导体GaN功率开关器件灵敏度测试技术。通过分析半导体GaN功率开关器件的导通电阻与击穿电压关系、空穴电流与栅极电流关系掌握功率开关器件击穿机理，在此基础上，测试半导体GaN功率开关器件灵敏度；根据灵敏度测试原理与微频通道衰减值周期检查原理，测量功率开关器件微频信号功率和微频通道衰减值，汇总微频通道衰减值和最后一次开关灵敏时的衰减值，得到半导体GaN功率开关器件灵敏度。实验结果表明：所提测试技术测量半导体GaN功率开关器件灵敏度过程中，平均测试误差为0.03 dB，仅平均花费9.42ms，是一种高效、可靠的半导体GaN功率开关器件灵敏度测试技术。

Sensitivity Testing Technology for Semiconductor GaN Power Switching Devices

esting sensitivity of semiconductor GaN power switch device is very important for controlling device performance. A new sensitivity test technique for semiconductor GaN power switch device is proposed. On the basis of analyzing the relationship between the conduction resistance and breakdown voltage of semiconductor GaN power switching devices, and the relationship between the hole current and the gate current, the breakdown mechanism of power switching devices is mastered. On this basis, the sensitivity of semiconductor GaN power switching devices is tested. The sensitivity of semiconductor GaN power switch devices is obtained by measuring the attenuation of the microfrequency channel and the attenuation of the microfrequency channel according to the sensitivity test principle and the attenuation cycle inspection principle of the microfrequency channel decay. The experimental results show that the average test error is 0.03 dB, and the average cost is only 9.42 MS, which is an efficient and reliable sensitivity test technology for semiconductor GaN power switch devices.