| 基于IGCT的高压三电平变频器失效机理及保护策略 |
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| 引用本文： | 赵争鸣,张海涛,袁立强,白华,杨志.基于IGCT的高压三电平变频器失效机理及保护策略[J].电工技术学报,2006,21(5):1-6,18. |
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| 作者姓名： | 赵争鸣 张海涛 袁立强 白华 杨志 |
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| 作者单位： | 清华大学电机系电力系统国家重点实验室,北京,100084 |
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| 摘 要： | 在分析了三电平变频器拓扑结构特点和IGCT结构特性的基础上,讨论了基于IGCT的高压三电平变频器失效机理及保护策略,提出了针对IGCT的全保护概念.对其安全运行区域进行了详尽的分析,结合实例给出定量的安全区域设计原则和相应的保护措施.
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| 关 键 词： | 高压变频器 三电平 失效机理 保护策略 |
Failure Mechanism and Protection Strategy of High Voltage Three-Level Inverter Based on IGCT |
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| Zhao Zhengming,Zhang Haitao,Yuan Liqiang,Bai Hua,Yang Zhi.Failure Mechanism and Protection Strategy of High Voltage Three-Level Inverter Based on IGCT[J].Transactions of China Electrotechnical Society,2006,21(5):1-6,18. |
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| Authors: | Zhao Zhengming Zhang Haitao Yuan Liqiang Bai Hua Yang Zhi |
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| Affiliation: | Tsinghua University Beijing 100084 China |
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| Abstract: | Based on the character of three-level inverter and structure of IGCT, the failure mechanism and protection strategy of high voltage three-level inverter are discussed and the whole protection of IGCT is proposed in this paper. Also the SOA (Safe Operational Area) is analyzed and its design principle is presented. |
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| Keywords: | IGCT |
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