The resistance degradation of (Ba0.5Sr0.5)TiO3 thin films |
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| Authors: | F Yan P Bao X B Chen J S Zhu Y N Wang |
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| Affiliation: | National laboratory of Solid State Microstructures, Department of Physics , Nanjing University , Nanjing, 210093, P. R. China |
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| Abstract: | Abstract The leakage current and dielectric properties of (Ba0.5Sr0.5)TiO3(BST) thin films prepared by pulsed laser deposition (PLD) were investigated. It was found that leakage currents for positive bias voltage were higher than that for negative bias voltage, which was attributed to the lattice mismatch between bottom Pt electrode and BST thin film. The time-dependent breakdown process under positive voltage was observed, which was interpreted as the increase of the internal electric field in the film near the bottom electrode. However, the internal electric field can be decreased and eventually recovered by applying negative bias voltage. It was found that internal electric field near the interface can influence the capacitance of the BST thin film capacitor. An explanation for the thickness effect of BST thin films was given. |
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| Keywords: | thin films leakage current Schottky barrier dielectric properties |
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