CHARACTERIZATIONS OF W-DOPED (Ba0.5Sr0.5)TiO3 THIN FILMS USING LaNiO3 ELECTRODE |
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| Authors: | CHUN-SHENG LIANG HUNG-YAO CHEN JENN-MING WU |
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| Affiliation: | Department of Materials Science and Engineering , National Tsing Hua University , Hsinchu 300, Taiwan, Republic of China |
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| Abstract: | ABSTRACT The (Ba0.5Sr0.5)TiO3 thin films were deposited onto LaNiO3 by RF-magnetron sputtering at 550°C. The influence of W content on microstructure and electrical properties of BST films were investigated. The surface and grain size become smoother and smaller as the W content increased. Besides, the dielectric constant, tunability, dissipation factor, and leakage current decreased when the W content increased. The 1% W is the optimal doping concentration. The resultant BST film, with proper dielectric constant and leakage current, has a tunability of 32%, a dissipation factor of 0.006, a FOM value of 53.3 under applied field of 450 kV/cm. |
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