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Simulation of phonon-limited mobility for nano-scale Si-based n-type non-planar device under general orientation and stress condition |
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| Authors: | Kai Xiu |
| Affiliation: | (1) IBM Semiconductor Research and Development Center (SRDC), System and Technology Group IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA |
| Abstract: | |
| Keywords: | Mobility Non-planar device Stress 1D transport |
| 本文献已被 SpringerLink 等数据库收录！ | |
