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Atomistic effect of delta doping layer in a 50 nm InP HEMT |
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| Authors: | N Seoane A J García-Loureiro K Kalna A Asenov |
| Affiliation: | (1) Department of Electronics and Computer Science, Univ. Santiago de Compostela, Campus Sur, 15706 Santiago de Compostela, Spain;(2) Department of Electronics & Electrical Engineering, University of Glasgow, Glasgow, G12 8LT, Scotland, United Kingdom;(3) Departamento de Electrónica e Computación, Universidade de Santiago de Compostela, Campus Sur, 15706 Santiago de Compostela, Spain |
| Abstract: | Fluctuations caused by discreteness of charge will play an important role when devices are scaled to gate lengths approaching nanometer dimensions. In this paper, we use a 3D drift-diffusion simulator to study an influence of discrete random dopant charges in the delta doping layer of a 50 nm gate length InP high electron mobility transistor. |
| Keywords: | 3D simulation Parallel solvers Random dopants Drift-diffusion HEMT |
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